Interface effects on the resonant tunnelling in GaAs/Al Ga1−As double-quantum-well triple-barriers

Interface effects on the resonant tunnelling in GaAs/Al Ga1−As double-quantum-well triple-barriers

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Bibliographic Details
Published in:Microelectronic engineering Vol. 43-44; pp. 191 - 195
Main Authors: Lima, Maria Consuelo A, Farias, Gil A, Freire, Valder N
Format: Journal Article
Language:English
Published: 01-08-1998
Online Access:Get full text
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Description
ISSN:0167-9317
DOI:10.1016/S0167-9317(98)00163-4