LP-MOCVD growth of ternary B Ga1−As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3

LP-MOCVD growth of ternary B Ga1−As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3

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Bibliographic Details
Published in:Microelectronics Vol. 39; no. 12; pp. 1678 - 1682
Main Authors: Wang, Qi, Ren, Xiaomin, Wang, Feihua, Feng, Jianyou, Lv, Jihe, Zhou, Jing, Cai, Shiwei, Huang, Hui, Huang, Yongqing
Format: Journal Article
Language:English
Published: 01-12-2008
Online Access:Get full text
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Description
ISSN:1879-2391
DOI:10.1016/j.mejo.2008.02.017