Low-Power Forming Free TiO 2– x /HfO 2– y /TiO 2– x -Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

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Published in:	IEEE transactions on electron devices Vol. 64; no. 8; pp. 3151 - 3158
Main Authors:	Bousoulas, Panagiotis, Michelakaki, Irini, Skotadis, Evangelos, Tsigkourakos, Menelaos, Tsoukalas, Dimitris
Format:	Journal Article
Language:	English
Published:	01-08-2017
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Author	Bousoulas, Panagiotis Tsigkourakos, Menelaos Skotadis, Evangelos Michelakaki, Irini Tsoukalas, Dimitris
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References_xml	– ident: ref23 doi: 10.1063/1.3624472 – volume: 82 start-page: 165309-1 year: 2010 ident: ref39 article-title: Diffusion of oxygen vacancies on a strained rutile TiO2 (110) surface publication-title: Phys Rev B Condens Matter contributor: fullname: wang – ident: ref6 doi: 10.1063/1.4803462 – ident: ref30 doi: 10.1038/srep01680 – ident: ref11 doi: 10.1063/1.4862797 – ident: ref2 doi: 10.1002/adfm.201303520 – ident: ref8 doi: 10.1063/1.4852695 – ident: ref28 doi: 10.1109/TED.2013.2279397 – ident: ref7 doi: 10.1021/nl401287w – ident: ref18 doi: 10.1063/1.4926505 – ident: ref5 doi: 10.1109/LED.2015.2464239 – ident: ref27 doi: 10.1002/adfm.201500825 – ident: ref12 doi: 10.1088/0031-8949/86/06/065703 – ident: ref40 doi: 10.1103/PhysRevB.87.155201 – ident: ref10 doi: 10.1063/1.4964872 – start-page: 249 year: 2016 ident: ref32 article-title: Physical modeling of the SET/RESET characteristics and analog properties of TiOx/HfO2-x/TiOx-based RRAM devices publication-title: Proc Simulation Semiconductor Processes and Devices (SISPAD) contributor: fullname: bousoulas – volume: 100 start-page: 3870 year: 2003 ident: ref35 article-title: Enhanced oxygen diffusivity in interfaces of nanocrystalline ZrO $_{2} \cdot $ Y2O3 publication-title: Proc Nat Acad Sci USA doi: 10.1073/pnas.0730783100 contributor: fullname: knoner – ident: ref33 doi: 10.1063/1.3271184 – ident: ref17 doi: 10.1002/adfm.201501517 – volume: 25 start-page: 1527 year: 2015 ident: ref19 article-title: Self-limited switching in Ta2O5/TaOx memristors exhibiting uniform multilevel changes in resistance publication-title: Adv Mater contributor: fullname: kim – ident: ref24 doi: 10.1039/C6NR03810G – ident: ref26 doi: 10.1063/1.4766737 – ident: ref14 doi: 10.1016/j.cap.2010.11.125 – ident: ref21 doi: 10.1063/1.3697690 – ident: ref9 doi: 10.1021/acs.nanolett.6b01781 – ident: ref29 doi: 10.1109/TED.2012.2202320 – ident: ref20 doi: 10.1103/PhysRevB.82.115109 – ident: ref38 doi: 10.1103/PhysRevB.86.165445 – ident: ref15 doi: 10.4028/www.scientific.net/AST.99.69 – ident: ref37 doi: 10.1063/1.4823854 – ident: ref42 doi: 10.1021/nn202983n – ident: ref16 doi: 10.1016/j.tsf.2014.09.041 – ident: ref4 doi: 10.1109/LED.2011.2127443 – ident: ref25 doi: 10.1088/0957-4484/23/7/075201 – ident: ref41 doi: 10.1021/acs.nanolett.5b00697 – ident: ref13 doi: 10.1111/j.1551-2916.2008.02426.x – ident: ref36 doi: 10.1063/1.3697648 – ident: ref3 doi: 10.1109/TED.2014.2330200 – volume: 10 start-page: 1 year: 2015 ident: ref1 article-title: Physical and chemical mechanisms in oxide-based resistance random access memory publication-title: Nanoscale Res Lett doi: 10.1186/s11671-015-0740-7 contributor: fullname: chang – ident: ref34 doi: 10.1063/1.4807666 – ident: ref22 doi: 10.1109/LED.2013.2294375 – ident: ref31 doi: 10.1021/nn405827t
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