Low-Power Forming Free TiO 2– x /HfO 2– y /TiO 2– x -Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

Low-Power Forming Free TiO 2– x /HfO 2– y /TiO 2– x -Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 64; no. 8; pp. 3151 - 3158
Main Authors: Bousoulas, Panagiotis, Michelakaki, Irini, Skotadis, Evangelos, Tsigkourakos, Menelaos, Tsoukalas, Dimitris
Format: Journal Article
Language:English
Published: 01-08-2017
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2709338