Interface Characterization of HfO 2 /GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Interface Characterization of HfO 2 /GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

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Published in:IEEE transactions on electron devices Vol. 63; no. 9; pp. 3459 - 3465
Main Authors: Tsai, Ming-Li, Ko, Jun-Yu, Wang, Shin-Yuan, Chien, Chao-Hsin
Format: Journal Article
Language:English
Published: 01-09-2016
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Author Chien, Chao-Hsin
Wang, Shin-Yuan
Ko, Jun-Yu
Tsai, Ming-Li
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CitedBy_id crossref_primary_10_1109_LED_2018_2838118
crossref_primary_10_7567_APEX_10_086501
crossref_primary_10_1016_j_jmst_2022_02_010
crossref_primary_10_1109_LED_2020_3048014
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Title Interface Characterization of HfO 2 /GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment
Volume 63
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