Interface Characterization of HfO 2 /GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Interface Characterization of HfO 2 /GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 63; no. 9; pp. 3459 - 3465
Main Authors: Tsai, Ming-Li, Ko, Jun-Yu, Wang, Shin-Yuan, Chien, Chao-Hsin
Format: Journal Article
Language:English
Published: 01-09-2016
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2587902