Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure
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| Published in: | IEEE electron device letters Vol. 5; no. 12; pp. 511 - 514 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-12-1984
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| Online Access: | Get full text |
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| Author | Cheng, C.L. Lalevic, B. Chang, T.Y. Liao, A.S.H. Caridi, E.A. Coldren, L.A. |
|---|---|
| Author_xml | – sequence: 1 givenname: C.L. surname: Cheng fullname: Cheng, C.L. – sequence: 2 givenname: A.S.H. surname: Liao fullname: Liao, A.S.H. – sequence: 3 givenname: T.Y. surname: Chang fullname: Chang, T.Y. – sequence: 4 givenname: E.A. surname: Caridi fullname: Caridi, E.A. – sequence: 5 givenname: L.A. surname: Coldren fullname: Coldren, L.A. – sequence: 6 givenname: B. surname: Lalevic fullname: Lalevic, B. |
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| DOI | 10.1109/EDL.1984.26008 |
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| EndPage | 514 |
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| StartPage | 511 |
| Title | Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure |
| Volume | 5 |
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