Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure

Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure

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Bibliographic Details
Published in:IEEE electron device letters Vol. 5; no. 12; pp. 511 - 514
Main Authors: Cheng, C.L., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A., Lalevic, B.
Format: Journal Article
Language:English
Published: 01-12-1984
Online Access:Get full text
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Description
ISSN:0741-3106
DOI:10.1109/EDL.1984.26008