An In 0.53 Ga 0.47 As/Si 3 N 4 n-channel inversion mode MISFET

An In 0.53 Ga 0.47 As/Si 3 N 4 n-channel inversion mode MISFET

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Bibliographic Details
Published in:IEEE electron device letters Vol. 2; no. 11; pp. 288 - 290
Main Authors: Liao, A.S.H., Leheny, R.F., Nahory, R.E., De Winter, J.C.
Format: Journal Article
Language:English
Published: 01-11-1981
Online Access:Get full text
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Description
ISSN:0741-3106
DOI:10.1109/EDL.1981.25436