Double heterojunction Al x Ga 1-x As/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

Double heterojunction Al x Ga 1-x As/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

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Bibliographic Details
Published in:IEEE electron device letters Vol. 4; no. 5; pp. 130 - 132
Main Authors: Su, S.L., Tejayadi, O., Drummond, T.J., Fischer, R., Morkoc, H.
Format: Journal Article
Language:English
Published: 01-05-1983
Online Access:Get full text
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Description
ISSN:0741-3106
DOI:10.1109/EDL.1983.25676