Strain‐Gradient‐Induced Modulation of Carrier Density and Mobility at the LaAlO 3 /SrTiO 3 Heterointerface

• Published in: Annalen der Physik Vol. 532; no. 7
• Main Authors: Zhang, Zhe, Jiang, Weimin, Liu, Kejian, Liu, Mingrui, Meng, Jianchao, Wu, Lingyan, Shao, Tingna, Ling, Jingzhuo, Yao, Chunli, Xiong, Changmin, Dou, Ruifen, Nie, Jiacai
• Format: Journal Article
• Language: English
• Published: 01-07-2020
• ISSN: 0003-3804; 1521-3889
• DOI: 10.1002/andp.202000155

Abstract
A strain gradient induced by mechanical bending on a SrTiO
3
substrate is demonstrated, and has a pronounced influence on the carrier density and mobility of the interfacial 2D electron gas at the LaAlO
3
/SrTiO
3
heterointerface. Tensile and compressive strain gradients represent two states of upward and downward bending. Under the tensile strain gradient, the carrier density decreases and the mobility has about 200% increase. Conversely, under the compressive strain gradient, the mobility decreases and the carrier density increases by up to 107%. These results demonstrate a range of opportunities to modulate the carrier density and mobility at oxide heterointerface and open up a promising way for further research on application of oxide devices.