Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO 2 -Based Ferroelectric Field-Effect Transistors

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO 2 -Based Ferroelectric Field-Effect Transistors

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Bibliographic Details
Published in:ACS applied materials & interfaces Vol. 14; no. 45; pp. 51459 - 51467
Main Authors: Dai, Siwei, Yang, Qijun, Zeng, Binjian, Zheng, Shuaizhi, Zhong, Xiangli, Xiang, Jinjuan, Gao, Jianfeng, Zhao, Jie, Liao, Jiajia, Liao, Min, Zhou, Yichun
Format: Journal Article
Language:English
Published: 16-11-2022
Online Access:Get full text
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Description
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.2c13392