Bottom‐Up Engineering of Subnanometer Copper Diffusion Barriers Using NH 2 ‐Derived Self‐Assembled Monolayers

• Published in: Advanced functional materials Vol. 20; no. 7; pp. 1125 - 1131
• Main Authors: Caro, Arantxa Maestre, Armini, Silvia, Richard, Olivier, Maes, Guido, Borghs, Gustaaf, Whelan, Caroline M., Travaly, Youssef
• Format: Journal Article
• Language: English
• Published: 09-04-2010
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.200902072

A 3‐aminopropyltrimethoxysilane‐derived self‐assembled monolayer (NH
2
SAM) is investigated as a barrier against copper diffusion for application in back‐end‐of‐line (BEOL) technology. The essential characteristics studied include thermal stability to BEOL processing, inhibition of copper diffusion, and adhesion to both the underlying SiO
2
dielectric substrate and the Cu over‐layer. Time‐of‐flight secondary ion mass spectrometry and X‐ray spectroscopy (XPS) analysis reveal that the copper over‐layer closes at 1–2‐nm thickness, comparable with the 1.3‐nm closure of state‐of‐the‐art Ta/TaN Cu diffusion barriers. That the NH
2
SAM remains intact upon Cu deposition and subsequent annealing is unambiguously revealed by energy‐filtered transmission electron microscopy supported by XPS. The SAM forms a well‐defined carbon‐rich interface with the Cu over‐layer and electron energy loss spectroscopy shows no evidence of Cu penetration into the SAM. Interestingly, the adhesion of the Cu/NH
2
SAM/SiO
2
system increases with annealing temperature up to 7.2 J m
−2
at 400 °C, comparable to Ta/TaN (7.5 J m
−2
at room temperature). The corresponding fracture analysis shows that when failure does occur it is located at the Cu/SAM interface. Overall, these results demonstrate that NH
2
SAM is a suitable candidate for subnanometer‐scale diffusion barrier application in a selective coating for copper advanced interconnects.