An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

Saved in:
Bibliographic Details
Published in:IEEE electron device letters Vol. 3; no. 6; pp. 158 - 160
Main Authors: Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.
Format: Journal Article
Language:English
Published: 01-06-1982
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0741-3106
DOI:10.1109/EDL.1982.25521