Chemical Composition of Al 2 O 3 /InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation

• Published in: Japanese Journal of Applied Physics Vol. 33; no. 10R; p. 5894
• Main Authors: Matsuda, Tetsuro, Yoshida, Haruhiko, Nara, Naoki, Hirohiko Niu, Hirohiko Niu, Seigô Kishino, Seigô Kishino
• Format: Journal Article
• Language: English
• Published: 01-10-1994
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.33.5894

Plasma and ultraviolet (UV) oxidation are used to obtain insulating films for the
fabrication of an InP metal-insulator-semiconductor diode. A thin Al film is deposited
onto a UV-oxidized n-type InP wafer and the Al film is oxidized with the use of a
microwave-excited O
2
+N
2
mixture plasma. The depth profile of the composition
of the oxidized film is measured by XPS with the aid of Ar ion sputtering. An annealing
procedure in N
2
-atmosphere followed by H
2
-atmosphere annealing was
applied to MIS diodes. Resultant InP MIS diodes show excellent
C-V
characteristics
with very small hysteresis.
C-V
measurements at 1 MHz yield a minimum interface
trap density of 6× 10
10
cm
-2
eV
-1
.