Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2
Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO 2 and trichloroethylene (TCE)-grown SiO 2 as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO 2 than...
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| Published in: | Japanese Journal of Applied Physics Vol. 32; no. 6R; p. 2854 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-06-1993
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| Online Access: | Get full text |
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| Abstract | Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO
2
and trichloroethylene (TCE)-grown SiO
2
as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO
2
than for dry-grown SiO
2
. The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO
2
is comparable to that using dry-grown SiO
2
. |
|---|---|
| AbstractList | Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO
2
and trichloroethylene (TCE)-grown SiO
2
as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO
2
than for dry-grown SiO
2
. The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO
2
is comparable to that using dry-grown SiO
2
. |
| Author | Hui-Zhen Zhang, Hui-Zhen Zhang Qin-Yi Tong, Qin-Yi Tong Chen, Jun-Ning Huang, Qing-An |
| Author_xml | – sequence: 1 givenname: Qing-An surname: Huang fullname: Huang, Qing-An – sequence: 2 givenname: Jun-Ning surname: Chen fullname: Chen, Jun-Ning – sequence: 3 givenname: Hui-Zhen Zhang surname: Hui-Zhen Zhang fullname: Hui-Zhen Zhang, Hui-Zhen Zhang – sequence: 4 givenname: Qin-Yi Tong surname: Qin-Yi Tong fullname: Qin-Yi Tong, Qin-Yi Tong |
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| CitedBy_id | crossref_primary_10_1016_j_susc_2005_11_003 crossref_primary_10_1016_j_susc_2005_03_037 |
| Cites_doi | 10.1063/1.96768 10.1049/el:19890271 10.1109/55.75725 10.1063/1.337750 10.1149/1.2085575 10.1143/JJAP.29.L2311 |
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| PublicationYear | 1993 |
| References | 1991; EDL-12 1991; 138 1990; 29 1989; 25 1986; 60 1986; 48 |
| References_xml | – volume: 48 start-page: 78 year: 1986 publication-title: Appl. Phys. Lett. doi: 10.1063/1.96768 – volume: 25 start-page: 394 year: 1989 publication-title: Electron. Lett. doi: 10.1049/el:19890271 – volume: EDL-12 start-page: 101 year: 1991 publication-title: IEEE Electron Device Lett. doi: 10.1109/55.75725 – volume: 60 start-page: 2987 year: 1986 publication-title: J. Appl. Phys. doi: 10.1063/1.337750 – volume: 138 start-page: 341 year: 1991 publication-title: J. Electrochem. Soc. doi: 10.1149/1.2085575 – volume: 29 start-page: L2311 year: 1990 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.29.L2311 |
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| Snippet | Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO
2
and trichloroethylene (TCE)-grown SiO
2
as the buried oxides. Both the fixed... |
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| Title | Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2 |
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