Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2

• Published in: Japanese Journal of Applied Physics Vol. 32; no. 6R; p. 2854
• Main Authors: Huang, Qing-An, Chen, Jun-Ning, Hui-Zhen Zhang, Hui-Zhen Zhang, Qin-Yi Tong, Qin-Yi Tong
• Format: Journal Article
• Language: English
• Published: 01-06-1993
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.32.2854

Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO
2
and trichloroethylene (TCE)-grown SiO
2
as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO
2
than for dry-grown SiO
2
. The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO
2
is comparable to that using dry-grown SiO
2
.