A planar embedded InGaAs photodiode on semi-insulating InP substrate for monolithically integrated PIN-FET receivers, using selective vapor phase epitaxy and ion implantation technique

A planar embedded InGaAs photodiode on semi-insulating InP substrate for monolithically integrated PIN-FET receivers, using selective vapor phase epitaxy and ion implantation technique

We report a new embedded InGaAs PIN photodetector structure on semi-insulating InP substrate, using selective VPE growth process and Be implantation technique. The outstanding features of this structure are that it is essentially planar and minimizes parasitic capacitance by having its bonding pads...

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Bibliographic Details
Published in:1983 International Electron Devices Meeting pp. 478 - 481
Main Authors: Liao, A.S.H., Bridges, T.J., Burkhardt, E.G., Tell, B., Leheny, R.F., Beebe, E.D.
Format: Conference Proceeding
Language:English
Published: IRE 1983
Subjects:
Bonding
Epitaxial growth
FETs
Indium gallium arsenide
Indium phosphide
Ion implantation
Parasitic capacitance
Photodetectors
Photodiodes
Substrates
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Summary:We report a new embedded InGaAs PIN photodetector structure on semi-insulating InP substrate, using selective VPE growth process and Be implantation technique. The outstanding features of this structure are that it is essentially planar and minimizes parasitic capacitance by having its bonding pads on a semi-insulating substrate, making it ideally suitable for integrating with high performance InGaAs or InP FET's. Good material quality of the selectively grown VPE InGaAs and the viability of Be implantation technique for forming detector quality p-n junctions in this material were demonstrated by the excellent characteristics of our detector.
DOI:10.1109/IEDM.1983.190547