Tuning charge and correlation effects for a single molecule on a graphene device
The ability to understand and control the electronic properties of individual molecules in a device environment is crucial for developing future technologies at the nanometre scale and below. Achieving this, however, requires the creation of three-terminal devices that allow single molecules to be b...
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Published in: | Nature communications Vol. 7; no. 1; p. 13553 |
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Main Authors: | , , , , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
London
Nature Publishing Group UK
25-11-2016
Nature Publishing Group Nature Portfolio |
Subjects: | |
Online Access: | Get full text |
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Summary: | The ability to understand and control the electronic properties of individual molecules in a device environment is crucial for developing future technologies at the nanometre scale and below. Achieving this, however, requires the creation of three-terminal devices that allow single molecules to be both gated and imaged at the atomic scale. We have accomplished this by integrating a graphene field effect transistor with a scanning tunnelling microscope, thus allowing gate-controlled charging and spectroscopic interrogation of individual tetrafluoro-tetracyanoquinodimethane molecules. We observe a non-rigid shift in the molecule’s lowest unoccupied molecular orbital energy (relative to the Dirac point) as a function of gate voltage due to graphene polarization effects. Our results show that electron–electron interactions play an important role in how molecular energy levels align to the graphene Dirac point, and may significantly influence charge transport through individual molecules incorporated in graphene-based nanodevices.
The development of single-molecule electronics calls for precise tuning of the electronic properties of individual molecules that go beyond two-terminal control. Here, Wickenburg
et al
. show gate-tunable switch of charge states of an isolated molecule using a graphene-based field-effect transistor. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Japan) Japan Society for the Promotion of Science (JSPS) AC02-05CH11231; DMR-1206512; DRM-1508412; R-144-000-295-281; EP/N005244/1; J3026-N16 Engineering and Physical Sciences Research Council (EPSRC) USDOE Office of Science (SC), Basic Energy Sciences (BES) Austrian Science Fund (FWF) National Science Foundation (NSF) National Research Foundation (NRF) (Singapore) These authors contributed equally to this work |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/ncomms13553 |