Higher-order quantum spin Hall effect in a photonic crystal

The quantum spin Hall effect lays the foundation for the topologically protected manipulation of waves, but is restricted to one-dimensional-lower boundaries of systems and hence limits the diversity and integration of topological photonic devices. Recently, the conventional bulk-boundary correspond...

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Published in:Nature communications Vol. 11; no. 1; p. 3768
Main Authors: Xie, Biye, Su, Guangxu, Wang, Hong-Fei, Liu, Feng, Hu, Lumang, Yu, Si-Yuan, Zhan, Peng, Lu, Ming-Hui, Wang, Zhenlin, Chen, Yan-Feng
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 28-07-2020
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Summary:The quantum spin Hall effect lays the foundation for the topologically protected manipulation of waves, but is restricted to one-dimensional-lower boundaries of systems and hence limits the diversity and integration of topological photonic devices. Recently, the conventional bulk-boundary correspondence of band topology has been extended to higher-order cases that enable explorations of topological states with codimensions larger than one such as hinge and corner states. Here, we demonstrate a higher-order quantum spin Hall effect in a two-dimensional photonic crystal. Owing to the non-trivial higher-order topology and the pseudospin-pseudospin coupling, we observe a directional localization of photons at corners with opposite pseudospin polarizations through pseudospin-momentum-locked edge waves, resembling the quantum spin Hall effect in a higher-order manner. Our work inspires an unprecedented route to transport and trap spinful waves, supporting potential applications in topological photonic devices such as spinful topological lasers and chiral quantum emitters. The quantum spin Hall effect is limited to one-dimensional lower boundary states which limits the possibilities for its exploitation in photonic devices. Here, the authors demonstrate a higher-order quantum spin Hall effect in a photonic crystal and observe opposite pseudospin corner states.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-020-17593-8