Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

• Published in: Scientific reports Vol. 10; no. 1; p. 21709
• Main Authors: Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 10-12-2020; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005/1007; 639/301/119/1000/1018; 639/301/357/1018; Aluminum; Engineering Sciences; Humanities and Social Sciences; Internet of Things; multidisciplinary; Science; Science (multidisciplinary); Silicon; Substrates; Two-dimensional materials; Electronic devices
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-020-77681-z

Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.