Structural Properties of Silicon Carbide Nano Structures Grown on Quartz Substrate Using CVD Method

• Published in: Theoretical and experimental chemistry Vol. 52; no. 4; pp. 259 - 264
• Main Authors: Mahmoodi, A., Ghoranneviss, M., Mehrani, Kh
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-09-2016; Springer; Springer Nature B.V
• Subjects: Chemical vapor deposition; Chemistry; Chemistry and Materials Science; Chemistry/Food Science; Crystal structure; Hexamethyldisiloxane; Methods; Nanostructure; Optical properties; Plasma physics; Quartz; Silicon; Silicon carbide; Silicon carbides; Silicon substrates; Technology application; Thin films; Vapor phases; nanomaterial; nanostructures; silicon carbide (SiC)
• ISSN: 0040-5760; 1573-935X
• DOI: 10.1007/s11237-016-9477-3

Silicon carbide (SiC) nanostructures were obtained by the chemical deposition of hexamethyldisiloxane (C
6
H
18
OSi
2
) from the vapor phase onto quartz with a supported cobalt catalyst. A study was carried out on the structural and optical properties of the SiC nanostructures obtained at 650, 700, 750, and 800 °C using scanning electron microscopy, XRD, and electron spectroscopy. All the films were found to have crystalline structure. The optical transmittance in the visible region increases with increasing synthesis temperature.