Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

• Published in: Advanced science Vol. 3; no. 11; pp. 1600003 - n/a
• Main Authors: Li, Menglin, Liu, Donghua, Wei, Dacheng, Song, Xuefen, Wei, Dapeng, Wee, Andrew Thye Shen
• Format: Journal Article
• Language: English
• Published: Germany John Wiley & Sons, Inc 01-11-2016; John Wiley and Sons Inc
• Subjects: Carbon; Chemical vapor deposition; controllable synthesis; Energy; Gases; Graphene; growth mechanism; Growth rate; plasma‐enhanced chemical vapor deposition; Review; Reviews; Sensors; growth mechanism; plasma‐enhanced chemical vapor deposition; controllable synthesis; graphene
• ISSN: 2198-3844; 2198-3844
• DOI: 10.1002/advs.201600003

Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.
Plasma‐enhanced chemical vapor deposition (PECVD) is one of the promising methods for controllable synthesis of graphene with the advantages of low growth temperature and being catalyst‐free. This review summarizes recent advance in the PECVD growth of graphene on different substrates, and discusses the growth mechanism and its related applications in electrical devices, supercapacitors, sensors, and so on.