Integratable High Linearity Compact Waveguide Coupled Tapered InGaAsP Photodetectors
We investigate high linear response tapered photodiodes composed of bulk and multiquantum-well absorption layers based on the integratable asymmetric twin waveguide architecture. The tapered shape reduces space-charge induced nonlinearities, enhancing the saturation current densities at high input o...
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Published in: | IEEE journal of quantum electronics Vol. 43; no. 7; pp. 597 - 606 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
New York, NY
IEEE
01-07-2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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Summary: | We investigate high linear response tapered photodiodes composed of bulk and multiquantum-well absorption layers based on the integratable asymmetric twin waveguide architecture. The tapered shape reduces space-charge induced nonlinearities, enhancing the saturation current densities at high input optical powers. The 1-dB compression current density for an InGaAsP bulk active layer photodiode (BPD) is in excess of (2.8 plusmn 0.3) kA/cm 2 , compared to quantum-well photo- diodes (QWPD) in the same materials system that saturate at (1.2 plusmn 0.1) kA/cm 2 . We find that the limited density of states of QWPDs leads to the early onset of current saturation. The BPD has a polarization sensitivity of S Pol = (1.0 plusmn 0.5) dB and responsivity R = (0.3plusmn0.03) A/W at a wavelength of 1.55 mum, whereas the QWPD has S Pol = (7plusmn1) dB and R = (0.55plusmn0.05) A/W, while both have a bandwidth of (11 plusmn 1) GHz. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2007.897927 |