Regulation of Thermal Emission Position in Biased Graphene

A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spe...

Full description

Saved in:

Bibliographic Details
Published in:	Nanomaterials (Basel, Switzerland) Vol. 12; no. 19; p. 3457
Main Authors:	Fan, Yansong, Zhang, Zhengzhuo, Zhu, Zhihong, Zhang, Jianfa, Xu, Wei, Wu, Fan, Yuan, Xiaodong, Guo, Chucai, Qin, Shiqiao
Format:	Journal Article
Language:	English
Published:	Switzerland MDPI AG 03-10-2022 MDPI
Subjects:	Emission analysis Emissions Emissions (Pollution) Emitters Graphene Graphite Laws, regulations and rules regulation Simulation Temperature Temperature distribution Thermal emission regulation graphene thermal emission
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 These authors contributed equally to this work.
ISSN:	2079-4991 2079-4991
DOI:	10.3390/nano12193457