Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

• Published in: Scientific reports Vol. 11; no. 1; p. 20909
• Main Authors: Lushchik, A., Kuzovkov, V. N., Kotomin, E. A., Prieditis, G., Seeman, V., Shablonin, E., Vasil’chenko, E., Popov, A. I.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 22-10-2021; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301; 639/766; Aluminum oxide; Chemical reactions; Crystals; Fusion reactors; Humanities and Social Sciences; Kinetics; Mechanical properties; multidisciplinary; Neutrons; Oxygen; Radiation; Recombination; Science; Science (multidisciplinary); Single crystals; Thermal stability
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-021-00336-0

Due to unique optical/mechanical properties and significant resistance to harsh radiation environments, corundum (α-Al
2
O
3
) is considered as a promising candidate material for windows and diagnostics in forthcoming fusion reactors. However, its properties are affected by radiation-induced (predominantly, by fast neutrons) structural defects. In this paper, we analyze thermal stability and recombination kinetics of primary Frenkel defects in anion sublattice − the
F
-type electronic centers and complementary oxygen interstitials in fast-neutron-irradiated corundum single crystals. Combining precisely measured thermal annealing kinetics for four types of primary radiation defects (neutral and charged Frenkel pairs) and the advanced model of chemical reactions, we have demonstrated for the first time a co-existence of the two types of interstitial defects – neutral O atoms and negatively charged O
-
ions (with attributed optical absorption bands peaked at energies of 6.5 eV and 5.6 eV, respectively). From detailed analysis of interrelated kinetics of four oxygen-related defects, we extracted their diffusion parameters (interstitials serve as mobile recombination partners) required for the future prediction of secondary defect-induced reactions and, eventually, material radiation tolerance.