Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

• Published in: IEEE transactions on electron devices Vol. 62; no. 6; pp. 1831 - 1838
• Main Authors: Balatti, Simone, Ambrogio, Stefano, Ielmini, Daniele
• Format: Journal Article
• Language: English
• Published: IEEE 01-06-2015
• Subjects: Clocks; Electrodes; Integrated circuits; Logic circuits; logic computing; Logic gates; Resistance; resistive switching random access memory (RRAM); Switches; Voltage measurement; logic gates; Logic circuits; resistive switching random access memory (RRAM); logic computing
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2422999

To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density.