The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 365; pp. 256 - 259
• Main Authors: Lazar, M., Laariedh, F., Cremillieu, P., Planson, D., Leclercq, J.-L.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2015; Elsevier
• Subjects: 4H–SiC; Aluminum; Channeling; Channeling effect; Computer simulation; Crystal structure; Devices; Electric power; Engineering Sciences; Ion implantation; JFET; Lateral JFET; SIMS; Simulation; Channeling effect; Ion implantation; SIMS; Lateral JFET; 4H–SiC; lateral JFET; ion implantation; Monte-Carlo simulations; 4H-SiC; channeling effect
• ISSN: 0168-583X; 1872-9584; 1872-9584; 0168-583X
• DOI: 10.1016/j.nimb.2015.07.033

A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H–SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.