Enhanced superconductivity in atomically thin TaS2
The ability to exfoliate layered materials down to the single layer limit has presented the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top–down approach to address the problem of superconductivity in the two-dimensio...
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Published in: | Nature communications Vol. 7; no. 1; p. 11043 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
London
Nature Publishing Group UK
17-03-2016
Nature Publishing Group Nature Portfolio |
Subjects: | |
Online Access: | Get full text |
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Summary: | The ability to exfoliate layered materials down to the single layer limit has presented the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top–down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron–phonon coupling constant. This work provides evidence that reducing the dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.
As a material's thickness decreases towards the atomic-scale, dimensional confinement may promote behaviour not found in the bulk, with potential technological applications. Here, the authors study superconductivity in TaS
2
as it is mechanically exfoliated towards the two-dimensional limit. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 These authors contributed equally to this work Present address: Valencia Nanophotonics Technology Center, Building 8F|1st Floor, Universidad Politécnica de Valencia, Camí de Vera, s/n, 46022 Valencia, Spain Present address: Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA- Nanociencia), Calle Farady 9, Cantoblanco 28049 Madrid, Spain Present address: Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/ncomms11043 |