Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs

• Published in: IEEE transactions on electron devices Vol. 62; no. 11; pp. 3508 - 3515
• Main Authors: Mengwei Si, Conrad, Nathan J., Sanghoon Shin, Jiangjiang Gu, Jingyun Zhang, Alam, Muhammad Ashraful, Ye, Peide D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-11-2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 1f noise; Ballistic transport; Channels; Devices; Dielectrics; Fluctuation; gate-all-around (GAA); Indium gallium arsenide; InGaAs; Logic gates; Low-frequency noise; MOSFET; MOSFETs; Nanowires; Noise; random telegraph noise (RTN); Transport; InGaAs; MOSFET; random telegraph noise (RTN); Ballistic transport; gate-all-around (GAA); low-frequency noise
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2433921

In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.