Phase Transition of In/Si(111) Surface Studied by Reflection High-Energy Positron Diffraction

• Published in: E-journal of surface science and nanotechnology Vol. 7; pp. 436 - 440
• Main Authors: Hashimoto, M., Fukaya, Y., Kawasuso, A., Ichimiya, A.
• Format: Journal Article
• Language: English
• Published: The Japan Society of Vacuum and Surface Science 01-01-2009
• Subjects: Indium; Reflection high-energy positron diffraction (RHEPD); Silicon; Surface Debye-temperature; Surface structure
• ISSN: 1348-0391; 1348-0391
• DOI: 10.1380/ejssnt.2009.436

We determined the structures of Si(111)-4×1-In and Si(111)-8×2-In surfaces that are formed at 293 K and 60 K, respectively, through the rocking curve analyses of reflection high-energy positron diffraction (RHEPD). The structure of Si(111)-4×1-In surface is in good agreement with the zigzag chain structure determined by the surface X-ray diffraction [O. Bunk et al., Phys. Rev. B 59, 12228 (1999)]. In the Si(111)-8×2-In surface, In atoms are displaced in two dimensional directions from the positions of zigzag chain structure. The structure of Si(111)-8×2-In surface determined here is compatible to the hexagon structure predicted by the first principles study [C. González, F. Flores, and J. Ortega, Phys. Rev. Lett. 96, 136101 (2006)]. We determined the surface Debye-temperatures of 4×1 and 8×2 phases to be 80 K and 130 K, respectively. [DOI: 10.1380/ejssnt.2009.436]