Transistor application of alkyl-substituted picene

• Published in: Scientific reports Vol. 4; no. 1; p. 5048
• Main Authors: Okamoto, Hideki, Hamao, Shino, Goto, Hidenori, Sakai, Yusuke, Izumi, Masanari, Gohda, Shin, Kubozono, Yoshihiro, Eguchi, Ritsuko
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 23-05-2014; Nature Publishing Group
• Subjects: 140/131; 147/3; 639/638/298/917; 639/766/1130/2798; Computer industry; Humanities and Social Sciences; multidisciplinary; Science; Silicon
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep05048

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C
14
H
29
)
2
, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C
14
H
29
)
2
thin-film FET with PbZr
0.52
Ti
0.48
O
3
(PZT) gate dielectric reached ~21 cm
2
V
−1
s
−1
, which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm
2
V
−1
s
−1
. The <μ> values for picene-(C
14
H
29
)
2
thin-film FETs with other gate dielectrics such as SiO
2
, Ta
2
O
5
, ZrO
2
and HfO
2
were greater than 5 cm
2
V
−1
s
−1
and the lowest absolute threshold voltage, |
V
th
|, (5.2 V) was recorded with a PZT gate dielectric; the average |
V
th
| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C
14
H
29
)
2
FET was also fabricated with an SiO
2
gate dielectric, yielding μ = 3.4 × 10
−2
 cm
2
V
−1
s
−1
. These results verify the effectiveness of picene-(C
14
H
29
)
2
for electronics applications.