Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

• Published in: Applied physics letters Vol. 107; no. 26; p. 262105
• Main Authors: Li, X., Bergsten, J., Nilsson, D., Danielsson, Ö., Pedersen, H., Rorsman, N., Janzén, E., Forsberg, U.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 28-12-2015
• Subjects: Aluminum gallium nitrides; Applied physics; Atomic force microscopy; Buffer layers; CARBON; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; Doping; Electron gas; ELECTRON MOBILITY; Electrons; GALLIUM NITRIDES; hemts; High electron mobility transistors; LAYERS; LEAKAGE CURRENT; MASS SPECTROSCOPY; mocvd; MOLECULES; Morphology; optimization; Physics; PROPANE; Secondary ion mass spectrometry; Semiconductor devices; Substrates; TRANSISTORS; X-RAY DIFFRACTION
• ISSN: 0003-6951; 1077-3118; 1077-3118
• DOI: 10.1063/1.4937575

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm−3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm−3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm−3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.