Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes

We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphen...

Full description

Saved in:
Bibliographic Details
Published in:Nano research Vol. 8; no. 4; pp. 1250 - 1258
Main Authors: Kvashnin, Dmitry G., Vancsó, Péter, Antipina, Liubov Yu, Márk, Géza I., Biró, László P., Sorokin, Pavel B., Chernozatonskii, Leonid A.
Format: Journal Article
Language:English
Published: Beijing Tsinghua University Press 01-04-2015
Springer Nature B.V
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schr/Sdinger equation.
Bibliography:11-5974/O4
We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schr/Sdinger equation.
gaphene,antidots,electronic properties,DFT
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-014-0611-z