Anisotropic spin interference in InGaAs/InAlAs rectangular loop arrays

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 42; no. 4; pp. 990 - 993
• Main Authors: Faniel, S., Matsuura, T., Mineshige, S., Sekine, Y., Koga, Takaaki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2010; Elsevier
• Subjects: AAS oscillations; Aharonov–Casher effect; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; InGaAs; Physics; Quantum interference; Quantum wells; Spin–orbit interaction; InGaAs; AAS oscillations; Aharonov–Casher effect; Spin–orbit interaction; Quantum interference; Rashba effect; Gallium Indium Arsenides Mixed; Spin-orbit interaction; Dresselhaus effect; Crystal orientation; Aharonov-Casher effect; Quantum wells; Oscillations; Aluminium Indium Arsenides Mixed; Aharonov Casher effect; Quantum interference phenomena; Anisotropy; Spin-orbit interactions; Time reversal
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.10.022

We report the experimental detection of the anisotropic spin–orbit interaction (SOI) in InGaAs/InAlAs quantum wells, using spin interference experiments in arrays of rectangular loops with their sides aligned to the [1
1
0] and [
1
1
¯
0
] crystallographic directions. While the gate voltage is tuned, the time reversal Aharonov–Casher (TRAC) oscillations exhibit higher frequencies when the loops have their longer side along the [1
1
0] direction, clearly highlighting the anisotropy of the SOI. We find that a simple spin interferometer model, including both the Rashba and the Dresselhaus SOIs, reproduces qualitatively the TRAC oscillations.