Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

• Published in: Physical review letters Vol. 93; no. 23; pp. 237005.1 - 237005.4
• Main Authors: BUSTARRET, E, KACMARCIK, J, MARCENAT, C, GHEERAERT, E, CYTERMANN, C, MARCUS, J, KLEIN, T
• Format: Journal Article
• Language: English
• Published: Ridge, NY American Physical Society 03-12-2004
• Subjects: Condensed Matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Effects of crystal defects, doping and substitution; Exact sciences and technology; Metals, alloys and compounds (a15, 001c15, laves phases, chevrel phases, borocarbides, etc.); Physics; Superconducting materials (excluding high-tc compounds); Superconductivity; Transition temperature variations; Phase diagrams; Monocrystals; Impurity density; Superconducting transitions; Diamonds; Doping; Magnetic field effects; Boron additions; Quantum effect; Magnetoresistance; Magnetic susceptibility
• ISSN: 0031-9007; 1079-7114
• DOI: 10.1103/physrevlett.93.237005

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.