Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

• Published in: IEEE electron device letters Vol. 27; no. 6; pp. 439 - 441
• Main Authors: Xu, J.P., Lai, P.T., Li, C.X., Zou, X., Chan, C.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Applied sciences; Atmosphere; Capacitors; CMOS technology; Density; Dielectric substrates; Dielectric, amorphous and glass solid devices; Dielectrics; Electrical properties; Electronics; Exact sciences and technology; Gates; Ge MOS capacitors; GeON; Germanium; Hafnium; Metal oxide semiconductors; MOS capacitors; MOSFETs; Oxidation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface treatment; wet-NO oxidation; Interfacial layer; Gate current; Interface state; Ge MOS capacitors; MOS capacitor; Charge density; Dielectric substrate; wet-NO oxidation; Leakage current; Oxidation; GeON; GeOx interlayer; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2006.874124

Wet-NO oxidation with or without wet NH/sub 3/ pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO/sub x/ interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeO/sub x/ in water-containing atmosphere.