Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities

The discovery of two‐dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and...

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Bibliographic Details
Published in:Advanced materials (Weinheim) Vol. 32; no. 27; pp. e1903800 - n/a
Main Authors: Liang, Shi‐Jun, Cheng, Bin, Cui, Xinyi, Miao, Feng
Format: Journal Article
Language:English
Published: Germany Wiley Subscription Services, Inc 01-07-2020
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Summary:The discovery of two‐dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and optical as well as magnetic properties enables the creation of a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open unprecedented opportunities for various kinds of device applications, e.g., vertical field‐effect transistors, ultrasensitive infrared photodetectors, spin‐filtering devices, and so on, which are inaccessible in conventional material heterostructures. Here, the current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed. The relevant challenges for achieving high‐performance devices are presented. An outlook into the future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functionalities is also provided. The diverse properties of van der Waals heterostructures open unprecedented opportunities for various types of device applications inaccessible in conventional heterostructure materials. Research progress of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic devices is reviewed, together with a discussion on the challenges and opportunities in the future development of multifunctional devices.
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201903800