Band-Bending in Organic Semiconductors: the Role of Alkali-Halide Interlayers

Band-Bending in Organic Semiconductors: the Role of Alkali-Halide Interlayers

Band‐bending in organic semiconductors, occurring at metal/alkali‐halide cathodes in organic‐electronic devices, is experimentally revealed and electrostatically modeled. Metal‐to‐organic charge transfer through the insulator, rather than doping of the organic by alkali‐metal ions, is identified as...

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Bibliographic Details
Published in:Advanced materials (Weinheim) Vol. 26; no. 6; pp. 925 - 930
Main Authors: Wang, Haibo, Amsalem, Patrick, Heimel, Georg, Salzmann, Ingo, Koch, Norbert, Oehzelt, Martin
Format: Journal Article
Language:English
Published: Germany Blackwell Publishing Ltd 12-02-2014
Subjects:
alkali halides
band bending
Cathodes
Charge transfer
Devices
Dipoles
Insulators
Interlayers
metal-insulator-semiconductor structures
organic electronics
Organic semiconductors
Origins
photoelectron spectroscopy
photoelectron spectroscopy
metal-insulator-semiconductor structures
organic electronics
alkali halides
band bending
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Summary:Band‐bending in organic semiconductors, occurring at metal/alkali‐halide cathodes in organic‐electronic devices, is experimentally revealed and electrostatically modeled. Metal‐to‐organic charge transfer through the insulator, rather than doping of the organic by alkali‐metal ions, is identified as the origin of the observed band‐bending, which is in contrast to the localized interface dipole occurring without the insulating buffer layer.
Bibliography:ArticleID:ADMA201303467
Alexander von Humboldt foundation
DGF - No. SFB951
Helmholtz-Energy-Alliance "Hybrid Photovoltaics"
ark:/67375/WNG-LGB4H03C-Q
istex:736321877EB5DCD9AC155AB5BBB6B370BA98ADFD
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201303467