Graphene nanoribbons initiated from molecularly derived seeds

Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to generate one-dimensional graphene nano...

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Bibliographic Details
Published in:Nature communications Vol. 13; no. 1; pp. 2992 - 10
Main Authors: Way, Austin J., Jacobberger, Robert M., Guisinger, Nathan P., Saraswat, Vivek, Zheng, Xiaoqi, Suresh, Anjali, Dwyer, Jonathan H., Gopalan, Padma, Arnold, Michael S.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 30-05-2022
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Summary:Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to generate one-dimensional graphene nanoribbons narrower than 5 nm when coupled with growth phenomena that selectively extend seeds along a single direction. This concept is demonstrated by subliming graphene-like polycyclic aromatic hydrocarbon molecules onto a Ge(001) catalyst surface and then anisotropically evolving size-controlled nanoribbons from the seeds along 110 of Ge(001) via CH 4 CVD. Armchair nanoribbons with mean normalized standard deviation as small as 11% (3 times smaller than nanoribbons nucleated without seeds), aspect ratio as large as 30, and width as narrow as 2.6 nm (tunable via CH 4 exposure time) are realized. Two populations of nanoribbons are compared in field-effect transistors (FETs), with off-current differing by 150 times because of the nanoribbons’ different widths. The authors report on harnessing sp2-organic molecules as a basis for uniformly initiating the homoepitaxial-like, size-controlled, synthesis of sub-5 nm semiconducting graphene nanoribbons for electronics via chemical vapor deposition.
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USDOE
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-022-30563-6