In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrol...
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Published in: | Advanced materials (Weinheim) Vol. 23; no. 29; pp. 3272 - 3277 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Weinheim
WILEY-VCH Verlag
02-08-2011
WILEY‐VCH Verlag |
Subjects: | |
Online Access: | Get full text |
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Summary: | Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer‐sized diameter and spacing. |
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Bibliography: | ark:/67375/WNG-X1VK651B-C ArticleID:ADMA201100507 istex:C892A49B2D401CAB402BB800F0BDF68D609B6F48 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201100507 |