In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrol...

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Bibliographic Details
Published in:Advanced materials (Weinheim) Vol. 23; no. 29; pp. 3272 - 3277
Main Authors: Choi, Sang-Jun, Park, Gyeong-Su, Kim, Ki-Hong, Cho, Soohaeng, Yang, Woo-Young, Li, Xiang-Shu, Moon, Jung-Hwan, Lee, Kyung-Jin, Kim, Kinam
Format: Journal Article
Language:English
Published: Weinheim WILEY-VCH Verlag 02-08-2011
WILEY‐VCH Verlag
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Summary:Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer‐sized diameter and spacing.
Bibliography:ark:/67375/WNG-X1VK651B-C
ArticleID:ADMA201100507
istex:C892A49B2D401CAB402BB800F0BDF68D609B6F48
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201100507