Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radi...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 54; no. 2; pp. 297 - 300
Main Authors:	Hashimoto, S., Kitajima, K., Uraoka, Y., Fuyuki, T., Morita, Y.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-02-2007 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Applied sciences Degradation Electronics Exact sciences and technology Heat generation Heating Low frequencies Low-temperature poly-Si Mathematical analysis pulse operation reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thermal degradation Thin films thin-film transistor (TFT) Transistors thin-film transistor (TFT) Polycrystal Heat source p channel pulse operation p type semiconductor Thin film transistor Measurement method Reliability High frequency Time constant Low-temperature poly-Si Thermal degradation Damaging
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