Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

• Published in: IEEE transactions on electron devices Vol. 54; no. 2; pp. 297 - 300
• Main Authors: Hashimoto, S., Kitajima, K., Uraoka, Y., Fuyuki, T., Morita, Y.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Degradation; Electronics; Exact sciences and technology; Heat generation; Heating; Low frequencies; Low-temperature poly-Si; Mathematical analysis; pulse operation; reliability; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermal degradation; Thin films; thin-film transistor (TFT); Transistors; thin-film transistor (TFT); Polycrystal; Heat source; p channel; pulse operation; p type semiconductor; Thin film transistor; Measurement method; Reliability; High frequency; Time constant; Low-temperature poly-Si; Thermal degradation; Damaging
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2006.888724

We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radiation for the first time. At a low frequency, the temperature difference between when the pulse was on and off was remarkable. As the frequency was increased, the maximum and minimum temperatures approached each other and became equal at a frequency of approximately 1 kHz. We also measured the degradation in pulse operation and discussed the relationship between the thermal temperature and the degradation in the pulse operation