Electrodynamics of Topologically Ordered Quantum Phases in Dirac Materials

First-principles calculations of the electronic ground state in tantalum arsenide are combined with tight-binding calculations of the field dependence of its transport model equivalent on the graphene monolayer to study the emergence of topologically ordered quantum states, and to obtain topological...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Vol. 11; no. 11; p. 2914
Main Authors: Hussien, Musa A M, Ukpong, Aniekan Magnus
Format: Journal Article
Language:English
Published: Switzerland MDPI AG 30-10-2021
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Summary:First-principles calculations of the electronic ground state in tantalum arsenide are combined with tight-binding calculations of the field dependence of its transport model equivalent on the graphene monolayer to study the emergence of topologically ordered quantum states, and to obtain topological phase diagrams. Our calculations include the degrees of freedom for nuclear, electronic, and photonic interactions explicitly within the quasistatic approximation to the time-propagation-dependent density functional theory. This field-theoretic approach allows us to determine the non-linear response of the ground state density matrix to the applied electromagnetic field at distinct quantum phase transition points. Our results suggest the existence of a facile electronic switch between trivial and topologically ordered quantum states that may be realizable through the application of a perpendicular electric or magnetic field alongside a staggered-sublattice potential in the underlying lattice. Signatures of the near field electrodynamics in nanoclusters show the formation of a quantum fluid phase at the topological quantum phase transition points. The emergent carrier density wave transport phase is discussed to show that transmission through the collective excitation mode in multilayer heterostructures is a unique possibility in plasmonic, optoelectronic, and photonic applications when atomic clusters of Dirac materials are integrated within nanostructures, as patterned or continuous surfaces.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11112914