Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications

• Published in: Nanomaterials (Basel, Switzerland) Vol. 12; no. 14; p. 2396
• Main Authors: Abiram, Gnanasampanthan, Thanihaichelvan, Murugathas, Ravirajan, Punniamoorthy, Velauthapillai, Dhayalan
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 13-07-2022; MDPI
• Subjects: Crystal structure; Electrical properties; field effect transistor; Field effect transistors; Light emitting diodes; light-emitting FET; Memory devices; mobility; perovskite; Perovskites; photo detector; Phototransistors; Photovoltaic cells; Review; Reviews; Semiconductor devices; Semiconductor materials; Sensors; Solar cells; Thin films; Transistors; mobility; perovskite; field effect transistor; light-emitting FET; photo detector
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano12142396

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.