Simulation of the growth of CVD films

• Published in: Chemical engineering science Vol. 50; no. 21; pp. 3493 - 3497
• Main Authors: Thiart, Jacob J., Hlavacek, Vladimir, Viljoen, Hendrik J.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 1995; Elsevier
• Subjects: Approximation theory; Boundary conditions; Chemical reactors; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Computer simulation; Cross-disciplinary physics: materials science; rheology; Diffusion in gases; Exact sciences and technology; Finite difference method; Finite element method; High pressure effects; Interfaces (materials); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Partial differential equations; Physics; Thermal effects; Continuum; CVD; Atmospheric pressure; Simulation; Growth interface; Gas solid interface; Theoretical study; Models; Numerical method; Film growth
• ISSN: 0009-2509; 1873-4405
• DOI: 10.1016/0009-2509(95)00201-F

Recently, a continuum model describing the evolution of a gas-solid interface during atmospheric pressure chemical vapor deposition is proposed. A linear stability analysis was used to determine the effect of reactor conditions on planar growth stability. The present paper discusses numerical solution of this model, and uses simulation examples to illustrate interface evolution under typical deposition conditions and from arbitrary initial interface shapes.