Mottness at finite doping and charge instabilities in cuprates

The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale...

Full description

Saved in:
Bibliographic Details
Published in:Nature physics Vol. 13; no. 8; pp. 806 - 811
Main Authors: Peli, S., Conte, S. Dal, Comin, R., Nembrini, N., Ronchi, A., Abrami, P., Banfi, F., Ferrini, G., Brida, D., Lupi, S., Fabrizio, M., Damascelli, A., Capone, M., Cerullo, G., Giannetti, C.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 01-08-2017
Nature Publishing Group
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 p → Cu-3 d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p cr ≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < p cr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides. The electron dynamics of single-layer Bi 2 Sr 2− x La x CuO 6+ δ is studied as a function of doping, revealing the evolution of charge-transfer excitations from incoherent and localized (as in a Mott insulator) to coherent and delocalized (as in a conventional metal).
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Present address: Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307 (US)
ISSN:1745-2473
1745-2481
DOI:10.1038/nphys4112