Mottness at finite doping and charge instabilities in cuprates
The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale...
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Published in: | Nature physics Vol. 13; no. 8; pp. 806 - 811 |
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Main Authors: | , , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
London
Nature Publishing Group UK
01-08-2017
Nature Publishing Group |
Subjects: | |
Online Access: | Get full text |
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Summary: | The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2
p
→ Cu-3
d
charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping
p
cr
≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the
p
<
p
cr
region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
The electron dynamics of single-layer Bi
2
Sr
2−
x
La
x
CuO
6+
δ
is studied as a function of doping, revealing the evolution of charge-transfer excitations from incoherent and localized (as in a Mott insulator) to coherent and delocalized (as in a conventional metal). |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 Present address: Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307 (US) |
ISSN: | 1745-2473 1745-2481 |
DOI: | 10.1038/nphys4112 |