Formation of MoS2 nanostructure arrays using anodic aluminum oxide template

• Published in: Micro and Nano Engineering Vol. 9; p. 100071
• Main Authors: Okamoto, Takaki, Shimizu, Tomohiro, Takase, Koichi, Ito, Takeshi, Shingubara, Shoso
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-11-2020; Elsevier
• Subjects: Anodic aluminum oxide; Electrical properties; MoS2; Nanotube; Anodic aluminum oxide; Electrical properties; MoS2; Nanotube
• ISSN: 2590-0072; 2590-0072
• DOI: 10.1016/j.mne.2020.100071

MoS2 nanotubes were prepared using a combination of a sol-gel technique and an anodic aluminum oxide template. The Morphology, crystal structure and electrical properties of the nanotubes were investigated. The prepared MoS2 nanostructure indicated multiwall nanotubes and c-axis of each stacked MoS2 layer was oriented to the diameter direction of the nanotube. The temperature dependence of the electrical resistance for the nanotubes indicated semiconductor-like behavior, and the activation energies were estimated to be 85.6 and 22.2 meV for the high and low temperature regions, respectively.
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•Formation of MoS2 nanotube arrays using an AAO template.•Electrical transport properties of the nanotube were investigated.•The temperature dependence of resistance of MoS2 nanotube indicates semiconductor-like behavior.