Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate

• Published in: Micromachines (Basel) Vol. 12; no. 12; p. 1547
• Main Authors: Qi, Wanting, Cao, Xiaojun, Xiao, Wen, Wang, Zhankui, Su, Jianxiu
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 12-12-2021; MDPI
• Subjects: 6H-SiC; Chemical reactions; Decomposition; dry polishing; fixed abrasive; Flash point; Hydrogen peroxide; Material removal rate (machining); Mechanical polishing; Morphology; Oxidizing agents; Oxygen; Polyurethane resins; Potassium permanganate; Reaction products; Residual stress; Satellite communications; Silicon dioxide; Single crystals; Sodium carbonate; Sodium silicates; Solid phases; solid-phase oxidant; Substrates; Surface roughness; tribochemical mechanical polishing; United States > US; 6H-SiC; dry polishing; fixed abrasive; tribochemical mechanical polishing; solid-phase oxidant
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi12121547

Na
CO
-1.5 H
O
, KClO
, KMnO
, KIO
, and NaOH were selected for dry polishing tests with a 6H-SiC single crystal substrate on a polyurethane polishing pad. The research results showed that all the solid-phase oxidants, except NaOH, could decompose to produce oxygen under the frictional action. After polishing with the five solid-phase oxidants, oxygen was found on the surface of SiC, indicating that all five solid-phase oxidants can have complex tribochemical reactions with SiC. Their reaction products are mainly SiO
and (SiO
)x. Under the action of friction, due to the high flash point temperature of the polishing interface, the oxygen generated by the decomposition of the solid-phase oxidant could oxidize the surface of SiC and generate a SiO
oxide layer on the surface of SiC. On the other hand, SiC reacted with H
O and generated a SiO
oxide layer on the surface of SiC. After polishing with NaOH, the SiO
oxide layer and soluble Na
SiO
could be generated on the SiC surface; therefore, the surface material removal rate (MRR) was the highest, and the surface roughness was the largest, after polishing. The lowest MRR was achieved after the dry polishing of SiC with KClO
.