Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

• Published in: Journal of alloys and compounds Vol. 561; pp. 231 - 233
• Main Authors: Jung, Hyun-Wook, Jung, Woo-Shik, Yu, Hyun-Yong, Park, Jin-Hong
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 05-06-2013; Elsevier
• Subjects: Atomic properties; Carrier density; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conductivity phenomena in semiconductors and insulators; Cross-disciplinary physics: materials science; rheology; Crystallization; Electrical properties; Electronic transport in condensed matter; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Galvanomagnetic and other magnetotransport effects; Germanium; Grain size; Growth from solid phases (including multiphase diffusion and recrystallization); Implants; Materials science; Metal induced crystallization; Methods of crystal growth; physics of crystal growth; Physics; Polycrystalline germanium; Solid phase crystallization; Solid-solid transitions; Specific phase transitions; Statistical process control; Polycrystalline germanium; Solid phase crystallization; Metal induced crystallization; Grain size; Vacancies; Doses; Electrical properties; Crystallization; Doping; Polycrystals; Phosphorus; Hall effect; XRD; Phosphorus additions; Defects; Thin films; Germanium; Carrier mobility; Germanium additions; Carrier density
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.02.023

Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ∼1017 in SPC and ∼1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ∼35cm2/Vs and ∼30cm2/Vs at 500°C and 400°C.